symbol max q2 units v ds v v gs v i dm t j , t stg c symbol units r q jl symbol units r q jl 40 48 62.5 c/w maximum junction-to-lead c steady-state 35 62.5 t 10s r q ja 48 maximum junction-to-ambient a steady-state 74 c/w maximum junction-to-ambient a steady-state 74 110 maximum junction-to-lead c steady-state 35 40 maximum junction-to-ambient a gate-source voltage 12 30 absolute maximum ratings t a =25c unless otherwise noted parameter drain-source voltage max q1 w -55 to 150 -55 to 150 junction and storage temperature range 2 1.28 1.28 t a =25c t a =70c 2 a 7.8 30 40 9.8 6.8 t a =25c t a =70c power dissipation p d pulsed drain current b continuous drain current a i d 30 20 8.5 typ max parameter: thermal characteristics mosfet q1 parameter: thermal characteristics mosfet q2 maximum junction-to-ambient a t 10s typ max r q ja 110 AO4824L 30v dual n-channel mosfet features q1 q2 v ds (v) = 30v v ds (v) = 30v i d = 8.5a i d =9.8a (v gs = 10v) r ds(on) < 17m w <13m w (v gs = 10v) r ds(on) < 27m w <15m w (v gs = 4.5v) general description the AO4824L uses advanced trench technology to provide excellent r ds(on) and low gate charge. the two mosfets make a compact and efficient switch and synchronous rectifier combination for use in dc-dc converters. g2 d2 s2 g1 d1 s1 g1 s1 g2 s2 d1 d1 d2 d2 2 4 5 1 3 86 7 top view soic-8 top view bottom view pin1 alpha & omega semiconductor, ltd.
AO4824L symbol min typ max units bv dss 30 v 0.003 1 t j =55c 5 i gss 100 na v gs(th) 1 1.8 3 v i d(on) 30 a 13.8 17 t j =125c 20 25 21 27 m w g fs 23 s v sd 0.76 1 v i s 3 a c iss 1040 1250 pf c oss 180 pf c rss 110 pf r g 0.7 0.85 w q g (10v) 19.2 23 nc q g (4.5v) 9.36 11.2 nc q gs 2.6 nc q gd 4.2 nc t d(on) 5.2 7.5 ns t r 4.4 6.5 ns t d(off) 17.3 25 ns t f 3.3 5 ns t rr 16.7 21 ns q rr 6.7 10 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time body diode reverse recovery charge i f =8.5a, di/dt=100a/ m s drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =8.5a reverse transfer capacitance i f =8.5a, di/dt=100a/ m s q1 electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a gate threshold voltage v ds =v gs i d =250 m a v ds =24v, v gs =0v v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current r ds(on) static drain-source on-resistance forward transconductance diode forward voltage m w v gs =4.5v, i d =6a i s =1a,v gs =0v v ds =5v, i d =8.5a total gate charge gate source charge gate resistance v gs =0v, v ds =0v, f=1mhz turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =1.8 w , r gen =3 w turn-off fall time maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters v gs =10v, v ds =15v, i d =8.5a total gate charge gate drain charge v gs =0v, v ds =15v, f=1mhz switching parameters a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environme nt with t a =25c. the value in any given application depends on the user's specific board d esign. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction t emperature. c. the r q ja is the sum of the thermal impedence from junction to l ead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtaine d using <300 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environme nt with t a =25c. the soa curve provides a single pulse rating. rev 5 : sep 2009 alpha & omega semiconductor, ltd.
AO4824L q1 typical electrical and thermal characteristics 13.4 16 22 26 0.76 0 5 10 15 20 25 30 0 1 2 3 4 5 v ds (volts) fig 1: on-region characteristics i d (a) v gs =3v 3.5v 4v 4.5v 10v 0 4 8 12 16 20 1.5 2 2.5 3 3.5 4 v gs (volts) figure 2: transfer characteristics i d (a) 10 12 14 16 18 20 22 24 26 0 5 10 15 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w ww w ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v v gs =4.5v 10 20 30 40 50 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w ww w ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =8.5a 25c 125c i d =8.5a alpha & omega semiconductor, ltd.
AO4824L q1 typical electrical and thermal characteristics 13.4 16 22 26 0.76 0 2 4 6 8 10 0 4 8 12 16 20 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 250 500 750 1000 1250 1500 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal imp edance z q qq q ja normalized transient thermal resistance c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 m s 10ms 1ms 0.1s 1s 10s dc r ds(on) limited t j(max) =150c t a =25c v ds =15v i d =8.5a single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =110c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 m s alpha & omega semiconductor, ltd.
AO4824L symbol min typ max units bv dss 30 v 0.004 1 t j =55c 5 i gss 100 na v gs(th) 0.6 1.1 2 v i d(on) 40 a 10.5 13 t j =125c 13.4 17 12 15 m w g fs 30 37 s v sd 0.73 1 v i s 3 a c iss 3656 4250 pf c oss 256 pf c rss 168 pf r g 0.86 1.05 w q g 30.5 36 nc q gs 4.5 nc q gd 8.5 nc t d(on) 5.5 8.2 ns t r 3.1 5 ns t d(off) 52.4 75 ns t f 5.7 8.5 ns t rr body diode reverse recovery time i f =9.8a, di/dt=100a/ m s 21.5 26 ns q rr body diode reverse recovery charge i f =9.8a, di/dt=100a/ m s 11 15 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. q2 electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters drain-source breakdown voltage i d =250 m a, v gs =0v i dss zero gate voltage drain current v ds =24v, v gs =0v m a gate-body leakage current v ds =0v, v gs = 12v gate threshold voltage v ds =v gs i d =250 m a on state drain current v gs =4.5v, v ds =5v r ds(on) static drain-source on-resistance v gs =10v, i d =9.8a m w v gs =4.5v, i d =9a maximum body-diode continuous current dynamic parameters input capacitance v gs =0v, v ds =15v, f=1mhz output capacitance reverse transfer capacitance forward transconductance v ds =5v, i d =9.8a diode forward voltage i s =1a switching parameters total gate charge gate resistance v gs =0v, v ds =0v, f=1mhz gate source charge gate drain charge turn-on delaytime v gs =10v, v ds =15v, r l =1.6 w , r gen =3 w v gs =4.5v, v ds =15v, i d =9.8a turn-on rise time turn-off delaytime turn-off fall time a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the value in any given application depends on the user's specific board design. the current ra ting is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by juncti on temperature. c. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6,12, 14 are obtained using <300 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the soa curve provides a single pulse rating . rev 5: sep 2009 alpha & omega semiconductor, ltd.
AO4824L q2 typical electrical and thermal characteristics 0 10 20 30 40 0 1 2 3 4 5 v ds (volts) fig 1: on-region characteristics i d (a) v gs =2v 2.5v 4.5v 10v 0 5 10 15 20 25 30 0.5 1 1.5 2 2.5 v gs (volts) figure 2: transfer characteristics i d (a) 9 10 11 12 13 0 5 10 15 20 25 30 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w ww w ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics i s (a) 125c 0.8 1 1.2 1.4 1.6 1.8 0 50 100 150 200 temperature (c) figure 4: on resistance vs. junction temperature normalized on-resistance v gs =10v v gs =4.5v 5 10 15 20 25 30 0 2 4 6 8 10 v gs (volts) figure 5: on resistance vs. gate-source voltage r ds(on) (m w ww w ) v ds =5v v gs =4.5v v gs =10v i d =9.8a 25c i d =9.8a 125c 25c 25c 125c alpha & omega semiconductor, ltd.
AO4824L q2 typical electrical and thermal characteristics 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal imp edance z q qq q ja normalized transient thermal resistance 0 1 2 3 4 5 0 5 10 15 20 25 30 35 q g (nc) figure 7: gate-charge characteristics v gs (volts) 100 1000 10000 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (a) figure 9: maximum forward biased safe operating area (note e) 100 m s 10ms 1ms 0.1s 1s 10s dc r ds(on) limited 10 m s v ds =15v i d =9.8a single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =110c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c f=1mhz v gs =0v t j(max) =150c, t a =25c alpha & omega semiconductor, ltd.
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